Surface Passivation of Germanium with ALD Al₂O₃: Impact of Composition and Crystallinity of GeO_x Interlayer

Germanium is an excellent material candidate for various applications, such as field effect transistors and radiation detectors/multijunction solar cells, due to its high carrier mobilities and narrow bandgap, respectively. However, the efficient passivation of germanium surfaces remains challenging...

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Hlavní autoři:	Joonas Isometsä, Zahra Jahanshah Rad, Tsun H. Fung, Hanchen Liu, Juha-Pekka Lehtiö, Toni P. Pasanen, Oskari Leiviskä, Mikko Miettinen, Pekka Laukkanen, Kalevi Kokko, Hele Savin, Ville Vähänissi
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	MDPI AG 2023-04-01
Edice:	Crystals
Témata:	surface passivation atomic layer deposition aluminum oxide ultrahigh vacuum corona oxide characterization of semiconductors quasi-steady-state microwave-detected photoconductance decay
On-line přístup:	https://www.mdpi.com/2073-4352/13/4/667
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