Physics of Ferroelectric Wurtzite Al1−xScxN Thin Films
Abstract Al1−xScxN emerges as a revolutionary ferroelectric material within the III‐N family. It combines exceptional switchable polarization (80–165 µC cm−2), highly tunable coercive fields (1.5–6.5 MV cm−¹), and a wide bandgap (4.9–5.6 eV). Unlike conventional ferroelectrics, Al1−xScxN exhibits re...
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| Formatua: | Artigo |
| Hizkuntza: | Inglês |
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Wiley-VCH
2025-02-01
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| Saila: | Advanced Electronic Materials |
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| Sarrera elektronikoa: | https://doi.org/10.1002/aelm.202400279 |
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