Interplay of Precursor and Plasma for The Deposition of HfO2 via PEALD: Film Growth and Dielectric Properties

Abstract HfO2 thin films are appealing for microelectronic applications such as high‐κ dielectric layers, memristors, and ferroelectric memory devices. To fulfill the different requirements of each application, the properties of the deposited material need to be tuned accordingly. In this context, p...

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Autores principales:	Florian Preischel, David Zanders, Thomas Berning, Aleksander Kostka, Detlef Rogalla, Claudia Bock, Anjana Devi
Formato:	Artigo
Lenguaje:	Inglês
Publicado:	Wiley-VCH 2023-10-01
Colección:	Advanced Materials Interfaces
Materias:	dielectric properties hafnium(IV) oxide plasma‐enhanced atomic layer deposition precursors thin films
Acceso en línea:	https://doi.org/10.1002/admi.202300244
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