Interplay of Precursor and Plasma for The Deposition of HfO2 via PEALD: Film Growth and Dielectric Properties

Abstract HfO2 thin films are appealing for microelectronic applications such as high‐κ dielectric layers, memristors, and ferroelectric memory devices. To fulfill the different requirements of each application, the properties of the deposited material need to be tuned accordingly. In this context, p...

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Bibliografiska uppgifter

Huvudupphov:	Florian Preischel, David Zanders, Thomas Berning, Aleksander Kostka, Detlef Rogalla, Claudia Bock, Anjana Devi
Materialtyp:	Artigo
Språk:	Inglês
Utgiven:	Wiley-VCH 2023-10-01
Serie:	Advanced Materials Interfaces
Ämnen:	dielectric properties hafnium(IV) oxide plasma‐enhanced atomic layer deposition precursors thin films
Länkar:	https://doi.org/10.1002/admi.202300244
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