Double Node Upset Immune RHBD-14T SRAM Cell for Space and Satellite Applications
Deep sub-micron memory devices play a crucial role in space electronic applications due to their susceptibility to single-event upset and double-node upset types of soft errors. When a charged particle from space hit a scaled memory circuit, the critical charge of sensitive storage nodes drops, and...
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| Principais autores: | , |
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| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
IEEE
2023-01-01
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| Serija: | IEEE Access |
| Teme: | |
| Online dostop: | https://ieeexplore.ieee.org/document/10235989/ |
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