Preparation and properties of intermetallic-bonded diamond grinding wheel for thinning SiC wafer
Objectives: Compared with Si-based materials, SiC has become an ideal substrate material for chip manufacturing due to its good thermal conductivity, high breakdown electric field strength, and large bandgap width. However, the Mohs hardness of SiC wafer is as high as 9.5, which makes it difficult t...
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| Principais autores: | , , , , |
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| Formato: | Artigo |
| Idioma: | Chinês |
| Publicado em: |
Zhengzhou Research Institute for Abrasives & Grinding Co., Ltd.
2024-12-01
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| coleção: | Jin'gangshi yu moliao moju gongcheng |
| Assuntos: | |
| Acesso em linha: | http://www.jgszz.cn/article/doi/10.13394/j.cnki.jgszz.2023.0250 |
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