Investigation of Laser Assisted Etching for Preparation Silicon Nanostructure and Diagnostic Physical Properties

In this paper; nanostructure porous silicon (PS) was prepared by using photo-electrochemical etching (PECE) of n-type silicon at 10 & 30 mA/cm2 etching current density for 10 minute. X-ray diffraction (XRD) confirms the formation of porous silicon and the crystal size is reduced toward nanometric sc...

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Номзүйн дэлгэрэнгүй

Үндсэн зохиолчид:	Zahraa J. Abdulkareem, Uday M. Nayef, Kadhim A.Hubeatir
Формат:	Artigo
Хэл сонгох:	Inglês
Хэвлэсэн:	Unviversity of Technology- Iraq 2015-04-01
Цуврал:	Engineering and Technology Journal
Нөхцлүүд:	porous silicon photoelectrochemical etching xrd afm ftir
Онлайн хандалт:	https://etj.uotechnology.edu.iq/article_105392_f98e95f0154f73c9d002ae4f41a2780c.pdf
Шошгууд:	Шошго нэмэх Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!