Investigation of Laser Assisted Etching for Preparation Silicon Nanostructure and Diagnostic Physical Properties
In this paper; nanostructure porous silicon (PS) was prepared by using photo-electrochemical etching (PECE) of n-type silicon at 10 & 30 mA/cm2 etching current density for 10 minute. X-ray diffraction (XRD) confirms the formation of porous silicon and the crystal size is reduced toward nanometric sc...
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| Autores principales: | , , |
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| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Unviversity of Technology- Iraq
2015-04-01
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| Colección: | Engineering and Technology Journal |
| Materias: | |
| Acceso en línea: | https://etj.uotechnology.edu.iq/article_105392_f98e95f0154f73c9d002ae4f41a2780c.pdf |
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