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Influence of O<sub>2</sub> Flow Rate on the Properties of Ga<sub>2</sub>O<sub>3</sub> Growth by RF Magnetron Sputtering

The influence of the O<sub>2</sub> flow rate on the properties of gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) by RF magnetron sputtering was studied. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmittance spectra, and photoluminescence (PL) spectra...

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Principais autores: Dengyue Li, Hehui Sun, Tong Liu, Hongyan Jin, Zhenghao Li, Yaxin Liu, Donghao Liu, Dongbo Wang
Formato: Artigo
Idioma:Inglês
Publicado: MDPI AG 2023-01-01
Series:Micromachines
Assuntos:
Ga<sub>2</sub>O<sub>3</sub>
O<sub>2</sub> flow rate
magnetron sputtering
Acceso en liña:https://www.mdpi.com/2072-666X/14/2/260
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