355 nm Nanosecond Ultraviolet Pulsed Laser Annealing Effects on Amorphous In-Ga-ZnO Thin Film Transistors

Bottom-gate thin-film transistors (TFTs) with n-type amorphous indium-gallium-zinc oxide (a-IGZO) active channels and indium-tin oxide (ITO) source/drain electrodes were fabricated. Then, an ultraviolet (UV) nanosecond pulsed laser with a wavelength of 355 nm was scanned to locally anneal the active...

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Váldodahkkit:	Sang Yeon Park, Younggon Choi, Yong Hyeok Seo, Hojun Kim, Dong Hyun Lee, Phuoc Loc Truong, Yongmin Jeon, Hocheon Yoo, Sang Jik Kwon, Daeho Lee, Eou-Sik Cho
Materiálatiipa:	Artigo
Giella:	Inglês
Almmustuhtton:	MDPI AG 2024-01-01
Ráidu:	Micromachines
Fáttát:	UV pulsed laser annealing a-IGZO TFT ITO/IGZO energy band structure selective annealing
Liŋkkat:	https://www.mdpi.com/2072-666X/15/1/103
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