Influence of metal–semiconductor interface treatments and absorber structure on the performance and reliability of uni-traveling-carrier photodiodes (UTC-PDs)
Abstract The effects of absorber structure–controlled by adjusting the thickness ratio of doped and undoped InGaAs layers–and metal-semiconductor interface treatment methods were investigated in waveguide-type UTC-PDs. Ultraviolet-ozone (UVO) and ammonia solution cleaning of the InGaAs surface impro...
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| Principais autores: | , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Portfolio
2026-01-01
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| coleção: | Scientific Reports |
| Acesso em linha: | https://doi.org/10.1038/s41598-025-34935-y |
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