Schottky barrier inhomogeneities at the interface of different epitaxial layer thicknesses of n-GaAs/Ti/Au/Si: Al0.33Ga0.67As
The effects of an epitaxial layer on the rectifying behavior of n-GaAs/Ti/Au/Si:Al0.33Ga0.67 As diodes have been examined through the inhomogeneity model on n+-GaAs substrate with orientation. The electrical properties and conduction mechanism of these materials were understood through theoretical m...
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| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
Elsevier
2020-09-01
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| Collection: | Heliyon |
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| Accès en ligne: | http://www.sciencedirect.com/science/article/pii/S2405844020316959 |
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