Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors
Abstract Atomic-layer-deposition (ALD) of In2O3 nano-films has been investigated using cyclopentadienyl indium (InCp) and hydrogen peroxide (H2O2) as precursors. The In2O3 films can be deposited preferentially at relatively low temperatures of 160–200 °C, exhibiting a stable growth rate of 1.4–1.5 Å...
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| Autori principali: | , , , , , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
SpringerOpen
2018-01-01
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| Serie: | Nanoscale Research Letters |
| Soggetti: | |
| Accesso online: | http://link.springer.com/article/10.1186/s11671-017-2414-0 |
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