Enhancement of InN Luminescence by Introduction of Graphene Interlayer

Indium nitride (InN) luminescence is substantially enhanced by the introduction of a multilayer graphene interlayer, mitigating the lattice mismatch between the InN epilayer and the Gallium nitride (GaN) template on a sapphire substrate via weak van der Waals interaction between graphene and nitride...

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Detalhes bibliográficos

Principais autores:	Darius Dobrovolskas, Shingo Arakawa, Shinichiro Mouri, Tsutomu Araki, Yasushi Nanishi, Jūras Mickevičius, Gintautas Tamulaitis
Formato:	Artigo
Idioma:	Inglês
Publicado em:	MDPI AG 2019-03-01
coleção:	Nanomaterials
Assuntos:	graphene indium nitride molecular beam epitaxy photoluminescence
Acesso em linha:	http://www.mdpi.com/2079-4991/9/3/417
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