Effect of Atomic Layer Etching on n-GaN MOS Capacitors
Gallium nitride (GaN) with its high breakdown voltage and low specific on resistance is suitable for high voltage power electronic applications. Common dry etching processes such as reactive ion etching with an inductively coupled plasma (ICP-RIE), however, damage the surface and affect the electric...
Uloženo v:
| Hlavní autoři: | , , |
|---|---|
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
IEEE
2026-01-01
|
| Edice: | IEEE Journal of the Electron Devices Society |
| Témata: | |
| On-line přístup: | https://ieeexplore.ieee.org/document/11550106/ |
| Tagy: |
Žádné tagy, Buďte první, kdo vytvoří štítek k tomuto záznamu!
|