Impact of post-deposition anneal on ALD Al2O3/etched GaN interface for gate-first MOSc-HEMT
MOS High Electron Mobility Transistors (MOS-HEMTs) may suffer from VTH instability and hysteresis reducing device performances. Post-Deposition Anneal (PDA) of the Atomic-Layer Deposited (ALD) dielectric has the potential to increase MOS-HEMT performances but needs to be compatible with the actual i...
Na minha lista:
| Principais autores: | , , , , , , , , , , |
|---|---|
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Elsevier
2023-03-01
|
| coleção: | Power Electronic Devices and Components |
| Assuntos: | |
| Acesso em linha: | http://www.sciencedirect.com/science/article/pii/S2772370423000019 |
| Tags: |
Sem tags, seja o primeiro a adicionar uma tag!
|