Epitaxial synthesis of graphene on 4H-SiC by microwave plasma chemical vapor deposition
Epitaxial graphene (EG) on semi-insulating SiC prepared by a thermal decomposition method is the most promising strategy for graphene application in large-scale integrated circuits due to compatibility with current semiconductor processes. In this study, high-quality few-layer graphene (FLG) was epi...
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| Autori principali: | , , , , , , , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
IOP Publishing
2020-01-01
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| Serie: | Materials Research Express |
| Soggetti: | |
| Accesso online: | https://doi.org/10.1088/2053-1591/abcb3a |
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