Epitaxial synthesis of graphene on 4H-SiC by microwave plasma chemical vapor deposition

Epitaxial graphene (EG) on semi-insulating SiC prepared by a thermal decomposition method is the most promising strategy for graphene application in large-scale integrated circuits due to compatibility with current semiconductor processes. In this study, high-quality few-layer graphene (FLG) was epi...

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Autors principals:	Xuemin Zhang, Changling Yan, Chunhong Zeng, Tianyu Sun, Zheng Xing, Wenhua Shi, Yiqun Wang, Chao Pang, Baoshun Zhang
Format:	Artigo
Idioma:	Inglês
Publicat:	IOP Publishing 2020-01-01
Col·lecció:	Materials Research Express
Matèries:	graphene epitaxial growth MPCVD 4H-SiC Hall mobility
Accés en línia:	https://doi.org/10.1088/2053-1591/abcb3a
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