Precision Layered Stealth Dicing of SiC Wafers by Ultrafast Lasers
With the intrinsic material advantages, silicon carbide (SiC) power devices can operate at high voltage, high switching frequency, and high temperature. However, for SiC wafers with high hardness (Mohs hardness of 9.5), the diamond blade dicing suffers from problems such as debris contaminants and u...
Sábháilte in:
| Príomhchruthaitheoirí: | , , , |
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| Formáid: | Artigo |
| Teanga: | Inglês |
| Foilsithe / Cruthaithe: |
MDPI AG
2022-06-01
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| Sraith: | Micromachines |
| Ábhair: | |
| Rochtain ar líne: | https://www.mdpi.com/2072-666X/13/7/1011 |
| Clibeanna: |
Níl clibeanna ann, Bí ar an gcéad duine le clib a chur leis an taifead seo!
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