Photosensitivity of Ga2O3 Schottky diodes: Effects of deep acceptor traps present before and after neutron irradiation

The photocurrent produced by 259 nm wavelength excitation was measured in β-Ga2O3 Schottky diodes before and after neutron irradiation. These samples differed by the density of deep acceptors in the lower half of the bandgap as detected by capacitance–voltage profiling under monochromatic illuminati...

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Autores principales:	E. B. Yakimov, A. Y. Polyakov, I. V. Shchemerov, N. B. Smirnov, A. A. Vasilev, P. S. Vergeles, E. E. Yakimov, A. V. Chernykh, A. S. Shikoh, F. Ren, S. J. Pearton
Formato:	Artigo
Lenguaje:	Inglês
Publicado:	AIP Publishing LLC 2020-11-01
Colección:	APL Materials
Acceso en línea:	http://dx.doi.org/10.1063/5.0030105
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