Interfacial Resistive Switching of Niobium–Titanium Anodic Memristors with Self-Rectifying Capabilities

A broad compositional range of Nb-Ti anodic memristors with volatile and self-rectifying behaviour was studied using a combinatorial screening approach. A Nb-Ti thin-film combinatorial library was co-deposited by sputtering, serving as the bottom electrode for the memristive devices. The library, wi...

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Bibliografische Detailangaben

Hauptverfasser:	Dominik Knapic, Alexey Minenkov, Elena Atanasova, Ivana Zrinski, Achim Walter Hassel, Andrei Ionut Mardare
Format:	Artigo
Sprache:	Inglês
Veröffentlicht:	MDPI AG 2024-02-01
Schriftenreihe:	Nanomaterials
Schlagworte:	anodic memristor Nb-Ti compositional library interfacial neuromorphic computing self–rectifying
Online-Zugang:	https://www.mdpi.com/2079-4991/14/4/381
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