Design and Performance Analysis of Low Pull-In Voltage of Dimple Type Capacitive RF MEMS Shunt Switch for Ka-Band

This paper deals with the study of dimple type RF MEMS capacitive shunt switch using different meandering techniques for high isolation and low actuation voltage. The novelty of the proposed RF MEMS switch is it incorporates the meanders and dimples, which help to reduce the actuation voltage. The p...

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Detalhes bibliográficos

Principais autores:	K. Girija Sravani, D. Prathyusha, K. Srinivasa Rao, P. Ashok Kumar, G. Sai Lakshmi, Ch. Gopi Chand, P. Naveena, Lakshmi Narayana Thalluri, Koushik Guha
Formato:	Artigo
Idioma:	Inglês
Publicado em:	IEEE 2019-01-01
coleção:	IEEE Access
Assuntos:	RF MEMS pull-in-voltage capacitance ratio dimples switching time insertion loss
Acesso em linha:	https://ieeexplore.ieee.org/document/8685093/
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