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N-Type Printed Organic Source-Gated Transistors with High Intrinsic Gain

Source-gated transistors (SGTs) are emerging devices enabling high-gain single-stage amplifiers with low complexity. To date, the p-type printed organic SGT (OSGT) has been developed and showed high gain and low power consumption. However, complementary OSGT circuits remained impossible because of t...

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Principais autores: Yudai Hemmi, Yuji Ikeda, Radu A. Sporea, Yasunori Takeda, Shizuo Tokito, Hiroyuki Matsui
Format: Artigo
Sprog:Inglês
Udgivet: MDPI AG 2022-12-01
Serier:Nanomaterials
Fag:
organic transistors
printed electronics
intrinsic gain
amplifiers
contact effects
Online adgang:https://www.mdpi.com/2079-4991/12/24/4441
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