ReRAM/CMOS Array Integration and Characterization via Design of Experiments
Abstract No two fabricated Resistive Random Access Memory (ReRAM) devices are alike. Each device can have its own individual optimal set of operating parameters that gives the best performance. However, in an array each device needs to be measured in similar operating settings. Therefore, it is nece...
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| Principais autores: | , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Wiley-VCH
2026-04-01
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| Colecção: | Advanced Electronic Materials |
| Assuntos: | |
| Acesso em linha: | https://doi.org/10.1002/aelm.202500203 |
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