Phonon frequency and energy of electron-phonon interactions at the band gap of InAs, InP, GaP, and GaN semiconductors
Abstract The effects of phonon energy on the temperature dependence of energy of electron-phonon interactions at the band gap of InAs, InP, GaP, and GaN are studied in this paper. In the models of temperature dependence of the width of the band gap such as Fan’s formula, Bose-Einstein model, Manoogi...
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| Principais autores: | , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2025-12-01
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| Colecção: | Discover Materials |
| Acesso em linha: | https://doi.org/10.1007/s43939-025-00474-6 |
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