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PREPARATION AND RESEARCH OF HETEROSTRUCTURES GaP / Si BY PULSED LASER DEPOSITION

Pulsed laser deposition method was heterostructure GaP / Si. The methods of reducing the magnitude of the mechanical stresses in the resulting film, Raman scattering found that using the method of pulsed laser deposition at 300 °C for heterostructure GaP / Si is possible to reduce the value of the m...

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Principais autores: Oleg Devitsky, Igor Sysoev, Vitaliy Batishchev, Viktor Vasiliev, Ivan Kasyanov
Formato: Artigo
Idioma:Russo
Publicado em: North Caucasus Federal University 2022-05-01
coleção:Вестник Северо-Кавказского федерального университета
Assuntos:
солнечный элемент
гетероструктуры а<sup>3</sup>в<sup>5</sup> / si
импульсное лазерное напыление
широкозонное окно
solar cell
a<sup>3</sup>b<sup>5</sup> / si heterostructures
pulsed laser deposition
wide-screen
Acesso em linha:https://vestnikskfu.elpub.ru/jour/article/view/2187
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