Harnessing Earth‐Abundant Lead‐Free Halide Perovskite for Resistive Switching Memory and Neuromorphic Computing

Abstract Non‐volatile memories are expected to revolutionize a wide range of information technologies, but their manufacturing cost is one of the top concerns researchers must address. This study presents a 1D lead‐free halide perovskite K2CuBr3, as a novel material candidate for the resistive switc...

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Detaylı Bibliyografya
Asıl Yazarlar:	Zijian Feng, Jiyun Kim, Jie Min, Peiyuan Guan, Shuo Zhang, Xinwei Guan, Tingting Mei, Tianxu Huang, Chun‐Ho Lin, Long Hu, Fandi Chen, Zhi Li, Jiabao Yi, Tom Wu, Dewei Chu
Materyal Türü:	Artigo
Dil:	Inglês
Baskı/Yayın Bilgisi:	Wiley-VCH 2025-06-01
Seri Bilgileri:	Advanced Electronic Materials
Konular:	1D artificial synapse memory perovskite resistive switching
Online Erişim:	https://doi.org/10.1002/aelm.202400804
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Harnessing Earth‐Abundant Lead‐Free Halide Perovskite for Resistive Switching Memory and Neuromorphic Computing

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