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Harnessing Earth‐Abundant Lead‐Free Halide Perovskite for Resistive Switching Memory and Neuromorphic Computing

Abstract Non‐volatile memories are expected to revolutionize a wide range of information technologies, but their manufacturing cost is one of the top concerns researchers must address. This study presents a 1D lead‐free halide perovskite K2CuBr3, as a novel material candidate for the resistive switc...

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Principais autores: Zijian Feng, Jiyun Kim, Jie Min, Peiyuan Guan, Shuo Zhang, Xinwei Guan, Tingting Mei, Tianxu Huang, Chun‐Ho Lin, Long Hu, Fandi Chen, Zhi Li, Jiabao Yi, Tom Wu, Dewei Chu
Format: Artigo
Sprog:Inglês
Udgivet: Wiley-VCH 2025-06-01
Serier:Advanced Electronic Materials
Fag:
1D
artificial synapse
memory
perovskite
resistive switching
Online adgang:https://doi.org/10.1002/aelm.202400804
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