Chemically Sensitive Photoluminescence of InGaN/GaN Nanowire Heterostructure Arrays
III-nitride semiconductors (AlGaN, GaN and InGaN) have received considerable attention in various fields ranging from high-frequency and high-temperature electronics [1] to LED lighting technologies [2]. [...]
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| Hlavní autoři: | , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
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MDPI AG
2019-06-01
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| Edice: | Proceedings |
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| On-line přístup: | https://www.mdpi.com/2504-3900/14/1/43 |
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