Electronic and Optical Properties of Dislocations in Silicon
Dislocations exhibit a number of exceptional electronic properties resulting in a significant increase of the drain current of metal-oxide-semiconductor field-effect transistors (MOSFETs) if defined numbers of these defects are placed in the channel. Measurements on individual dislocations in Si ref...
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| Hlavní autoři: | , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
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MDPI AG
2016-06-01
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| Edice: | Crystals |
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| On-line přístup: | http://www.mdpi.com/2073-4352/6/7/74 |
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