Reduced Turn-On Voltage for npn Graded-Base AlGaN/GaN Heterojunction Bipolar Transistors by Thermal Treatment
A thermal treatment was employed to improve the DC performances of npn graded-base AlGaN/GaN heterojunction bipolar transistors (HBTs). Such HBTs without the thermal treatment exhibit a higher turn-on voltage of 6.45 V, a lower current gain of 0.84, and a lower collector current of 3.18 × 10−4 mA at...
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| Главные авторы: | , |
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| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
Wiley
2012-01-01
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| Серии: | Advances in Materials Science and Engineering |
| Online-ссылка: | http://dx.doi.org/10.1155/2012/654762 |
| Метки: |
Нет меток, Требуется 1-ая метка записи!
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