Nb4N3TX MXene decorated Bi2WO6/NbSe2 S-scheme heterojunction with improved optoelectronic and photoelectrochemical properties: Experimental and In-silico studies

Fabrication of a well-designed heterostructure is vital for attaining efficient charge-carrier separation. Herein, Nb4N3Tx MXene decorated Bi2WO6/NbSe2 S-scheme heterojunction with enhanced interfacial charge transfer capabilities was designed via hydrothermal and ultrasonication synthetic routes. A...

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Hlavní autoři:	Antony Okinyi Onjwaya, Majahekupheleni Livileyise Malati, Krishna Kuben Govender, Adrian Mark Abrahams, Kwazikwakhe Bethuel Gabuza, Jane Catherine Ngila, Langelihle Nsikayezwe Dlamini
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	Elsevier 2025-12-01
Edice:	Materials Today Advances
Témata:	Photocatalysis S-scheme Interfacial contact Nb4N3Tx MXene In-silico studies
On-line přístup:	http://www.sciencedirect.com/science/article/pii/S2590049825000578
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