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Nb4N3TX MXene decorated Bi2WO6/NbSe2 S-scheme heterojunction with improved optoelectronic and photoelectrochemical properties: Experimental and In-silico studies

Fabrication of a well-designed heterostructure is vital for attaining efficient charge-carrier separation. Herein, Nb4N3Tx MXene decorated Bi2WO6/NbSe2 S-scheme heterojunction with enhanced interfacial charge transfer capabilities was designed via hydrothermal and ultrasonication synthetic routes. A...

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Principais autores: Antony Okinyi Onjwaya, Majahekupheleni Livileyise Malati, Krishna Kuben Govender, Adrian Mark Abrahams, Kwazikwakhe Bethuel Gabuza, Jane Catherine Ngila, Langelihle Nsikayezwe Dlamini
格式: Artigo
語言:Inglês
出版: Elsevier 2025-12-01
叢編:Materials Today Advances
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在線閱讀:http://www.sciencedirect.com/science/article/pii/S2590049825000578
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