Nb4N3TX MXene decorated Bi2WO6/NbSe2 S-scheme heterojunction with improved optoelectronic and photoelectrochemical properties: Experimental and In-silico studies
Fabrication of a well-designed heterostructure is vital for attaining efficient charge-carrier separation. Herein, Nb4N3Tx MXene decorated Bi2WO6/NbSe2 S-scheme heterojunction with enhanced interfacial charge transfer capabilities was designed via hydrothermal and ultrasonication synthetic routes. A...
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| Principais autores: | , , , , , , |
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| 格式: | Artigo |
| 語言: | Inglês |
| 出版: |
Elsevier
2025-12-01
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| 叢編: | Materials Today Advances |
| 主題: | |
| 在線閱讀: | http://www.sciencedirect.com/science/article/pii/S2590049825000578 |
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