The Investigation of Carrier Leakage Mechanism Based on ABC-Models in InGaN/GaN MQW and Its Effect on Internal Quantum Efficiency under Optical Excitation
In this work, a GaN-based multiple quantum well (MQW) sample has a much higher IQE although it has a stronger non-radiative recombination. Through experimental verification, the higher IQE is attributed to the suppressed carrier leakage mechanism, which is normally neglected under optical excitation...
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| Glavni autori: | , , , , , |
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| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
MDPI AG
2022-01-01
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| Serija: | Crystals |
| Teme: | |
| Online pristup: | https://www.mdpi.com/2073-4352/12/2/171 |
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