Influence of AlxGa1−xN barrier layer thickness and p-GaN gate characteristics on the threshold voltage of p-GaN/AlGaN/GaN high electron mobility transistors
In this research work, the pivotal role of threshold voltage (Vth) in the performance optimization of enhancement-mode (E-mode) AlGaN/GaN-based high-electron-mobility transistors (HEMTs) is explored. We report the development of an E-mode AlGaN/GaN HEMT through the strategic design of the AlxGa1−xN...
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| Autors principals: | , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
AIP Publishing LLC
2025-04-01
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| Col·lecció: | AIP Advances |
| Accés en línia: | http://dx.doi.org/10.1063/5.0250125 |
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