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First-principles calculation of the band gap of AlxGa1¡-xN and InxGa1¡-xN

Ab-initio calculations of the band gap variation of AlxGa1¡xN and InxGa1¡xN ternary compounds were carried out using the Full-Potential Linearized Augmented Plane Waves (FLAPW) method, within the Density Functional Theory (DFT). These nitrides were modeled in their wurtzite structure using the super...

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Bibliografski detalji
Izdano u:Revista Mexicana de Física
Glavni autori: Roberto Núñez-González, Armando Reyes-Serrato, Alvaro Posada-Amarillas, Donald H. Galván
Format: Artigo
Jezik:Espanhol
Izdano: Sociedad Mexicana de Física A.C. 2008
Teme:
Ab
Online pristup:https://www.redalyc.org/articulo.oa?id=57019061017
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