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Enhanced thermoelectric performance of SnSe by controlled vacancy population

Abstract The thermoelectric performance of SnSe strongly depends on its low-energy electron band structure that provides high density of states in a narrow energy window due to the multi-valley valence band maximum (VBM). Angle-resolved photoemission spectroscopy measurements, in conjunction with fi...

Täydet tiedot

Tallennettuna:
Päätekijät: Ji-Eun Lee, Kyoo Kim, Van Quang Nguyen, Jinwoong Hwang, Jonathan D. Denlinger, Byung Il Min, Sunglae Cho, Hyejin Ryu, Choongyu Hwang, Sung-Kwan Mo
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: SpringerOpen 2023-07-01
Sarja:Nano Convergence
Aiheet:
Thermoelectric
Defect engineering
Electron band structure
Vacancy
SnSe
Linkit:https://doi.org/10.1186/s40580-023-00381-7
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