Photoluminescence and Electrical Properties of n-Ce-Doped ZnO Nanoleaf/p-Diamond Heterojunction

The n-type Ce:ZnO (NL) grown using a hydrothermal method was deposited on a p-type boron-doped nanoleaf diamond (BDD) film to fabricate an n-Ce:ZnO NL/p-BDD heterojunction. It shows a significant enhancement in photoluminescence (PL) intensity and a more pronounced blue shift of the UV emission peak...

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Autors principals:	Qinglin Wang, Yu Yao, Xianhe Sang, Liangrui Zou, Shunhao Ge, Xueting Wang, Dong Zhang, Qingru Wang, Huawei Zhou, Jianchao Fan, Dandan Sang
Format:	Artigo
Idioma:	Inglês
Publicat:	MDPI AG 2022-10-01
Col·lecció:	Nanomaterials
Matèries:	Ce-doped ZnO NLs boron-doped diamond heterojunction photoluminescence electrical transport behavior high temperature
Accés en línia:	https://www.mdpi.com/2079-4991/12/21/3773
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