A Coupling Mechanism between Flicker Noise and Hot Carrier Degradations in FinFETs

A coupling mechanism between flicker noise and hot carrier degradation (HCD) is revealed in this work. Predicting the flicker noise properties of fresh and aged devices is becoming essential for circuit designs, requiring an understanding of the fundamental noise behaviors. While certain models for...

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Principais autores:	Minghao Liu, Zixuan Sun, Haoran Lu, Cong Shen, Lining Zhang, Runsheng Wang, Ru Huang
Format:	Artigo
Jezik:	Inglês
Izdano:	MDPI AG 2023-04-01
Serija:	Nanomaterials
Teme:	reliability flicker noise hot carrier degradation (HCD) compact model
Online dostop:	https://www.mdpi.com/2079-4991/13/9/1507
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