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Improved Performance of Deep Ultraviolet Photodetector From Sputtered Ga<sub>2</sub>O<sub>3</sub> Films Using Post-Thermal Treatments

The metal-semiconductor-metal photodetectors based on the sputtered gallium oxide films on sapphire substrates after various post-thermal treatments have been investigated. The photodetector performance of the furnace-annealed gallium oxide sample degraded with the increase of annealing temperature...

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Principais autores: Hui Li, Po-Wei Chen, Shuo-Huang Yuan, Tsun-Min Huang, Sam Zhang, Dong-Sing Wuu
Formato: Artigo
Idioma:Inglês
Publicado: IEEE 2019-01-01
Series:IEEE Photonics Journal
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Acceso en liña:https://ieeexplore.ieee.org/document/8877740/
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