Improved Performance of Deep Ultraviolet Photodetector From Sputtered Ga₂O₃ Films Using Post-Thermal Treatments

The metal-semiconductor-metal photodetectors based on the sputtered gallium oxide films on sapphire substrates after various post-thermal treatments have been investigated. The photodetector performance of the furnace-annealed gallium oxide sample degraded with the increase of annealing temperature...

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Hlavní autoři:	Hui Li, Po-Wei Chen, Shuo-Huang Yuan, Tsun-Min Huang, Sam Zhang, Dong-Sing Wuu
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	IEEE 2019-01-01
Edice:	IEEE Photonics Journal
Témata:	Gallium oxide photodetector post thermal annealing quasi-single-crystalline diffusion.
On-line přístup:	https://ieeexplore.ieee.org/document/8877740/
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