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Analytical and Physical Investigation on Source Resistance in In<i><sub>x</sub></i>Ga<i><sub>1−x</sub></i>As Quantum-Well High-Electron-Mobility Transistors

We present a fully analytical model and physical investigation on the source resistance (<i>R<sub>S</sub></i>) in In<i><sub>x</sub></i>Ga<i><sub>1−x</sub></i>As quantum-well high-electron mobility transistors based on a three-layer TLM system. The <i>R<sub>S</sub></i> model in this work was derived...

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Principais autores: Ji-Hoon Yoo, In-Geun Lee, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Jae-Hak Lee, Dae-Hyun Kim
Format: Artigo
Sprog:Inglês
Udgivet: MDPI AG 2023-02-01
Serier:Micromachines
Fag:
source resistance
TLM
In<i><sub>x</sub></i>Ga<i><sub>1−x</sub></i>As
HEMT
Online adgang:https://www.mdpi.com/2072-666X/14/2/439
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