On the Formation of Black Silicon Features by Plasma-Less Etching of Silicon in Molecular Fluorine Gas
In this paper, we study the plasma-less etching of crystalline silicon (c-Si) by F<sub>2</sub>/N<sub>2</sub> gas mixture at moderately elevated temperatures. The etching is performed in an inline etching tool, which is specifically developed to lower costs for products needing a high volume manufact...
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| Hlavní autoři: | , , , , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
MDPI AG
2020-11-01
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| Edice: | Nanomaterials |
| Témata: | |
| On-line přístup: | https://www.mdpi.com/2079-4991/10/11/2214 |
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