Low Temperature HfO₂ Interface Engineering in Dual-Gate and Gate-All-Around MoS₂ Transistors

This paper introduces the deposition of seed layers using a soaking technique to deposit dielectric layers on transition metal dichalcogenides (TMDs). This method addresses the bottleneck caused by the lack of dangling bonds in two-dimensional materials, which hinders the adsorption of precursors du...

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Principais autores:	Po-Heng Pao, Cheng-Yi Lin, Heng-Tung Hsu, Chao-Hsin Chien
Formato:	Artigo
Idioma:	Inglês
Publicado:	IEEE 2025-01-01
Series:	IEEE Journal of the Electron Devices Society
Assuntos:	Two-dimensional materials soak atomic Layer deposition gate-all-around transistor
Acceso en liña:	https://ieeexplore.ieee.org/document/11129037/
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