Atomic-column resolution quantitative composition analysis of AlN interlayer in MOCVD-grown AlGaN/AlN/GaN heterostructure using HAADF-STEM
Quantitative compositional analysis using high-angle annular dark-field scanning transmission electron microscopy was performed for a metal-organic chemical vapor deposition-grown AlGaN/AlN/GaN heterostructure at atomic-column resolution. In addition, the effects that different concentrations of Al...
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| Asıl Yazarlar: | , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
AIP Publishing LLC
2023-01-01
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| Seri Bilgileri: | AIP Advances |
| Online Erişim: | http://dx.doi.org/10.1063/5.0123768 |
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