Enhancing bonding strength of the electroplated Cu pillars for semiconductor package by controlling grain orientation

Abstract The Cu pillar bump, an electrode formed on a silicon chip, connects the devices inside a high bandwidth memory (HBM) package and is the most important interconnection affecting the electrical, thermal, and mechanical properties of advanced semiconductor package. Recently, the number of inpu...

Ausführliche Beschreibung

Bibliografische Detailangaben

Hauptverfasser:	JaeJun Yoon, TaekSoo Shin, DongJin Kim, KunSang Park, DongKeun Na, Yeonju Go, SeungBoo Jung
Format:	Artigo
Sprache:	Inglês
Veröffentlicht:	Nature Portfolio 2026-02-01
Schriftenreihe:	Scientific Reports
Schlagworte:	Cu pillar bump Electroplating Current density Undercut Mechanical stress
Online-Zugang:	https://doi.org/10.1038/s41598-026-38879-9
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