Monolithically Integrated THz Detectors Based on High-Electron-Mobility Transistors
We present THz direct detectors based on an AlGaN/GaN high electron mobility transistor (HEMT), featuring excellent optical sensitivity and low noise-equivalent power (NEP). These detectors are monolithically integrated with various antenna designs and exhibit state-of-the-art performance at room te...
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| Автори: | , , , , , , , |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
MDPI AG
2025-06-01
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| Серія: | Sensors |
| Предмети: | |
| Онлайн доступ: | https://www.mdpi.com/1424-8220/25/11/3539 |
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