Monolithically Integrated THz Detectors Based on High-Electron-Mobility Transistors
We present THz direct detectors based on an AlGaN/GaN high electron mobility transistor (HEMT), featuring excellent optical sensitivity and low noise-equivalent power (NEP). These detectors are monolithically integrated with various antenna designs and exhibit state-of-the-art performance at room te...
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| Autori principali: | , , , , , , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
MDPI AG
2025-06-01
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| Serie: | Sensors |
| Soggetti: | |
| Accesso online: | https://www.mdpi.com/1424-8220/25/11/3539 |
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