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High-density two-dimensional electron gas in ScAlN/GaN heterostructures grown by sputter epitaxy with enhanced metal supply

We report high-density two-dimensional electron gases in ScAlN/AlGaN/AlN/GaN heterostructures grown by sputter epitaxy with an enhanced metal supply. By optimizing the growth temperature to 775 °C, we achieved atomically flat surfaces and high crystallinity. Moreover, we obtained a record-high sheet...

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Principais autores: Tomoya Okuda, Kouei Kubota, Yusuke Wakamoto, Takahiko Kawahara, Kozo Makiyama, Ken Nakata, Kazuhisa Ikeda, Takuya Maeda, Atsushi Kobayashi
פורמט: Artigo
שפה:Inglês
יצא לאור: IOP Publishing 2026-01-01
סדרה:Applied Physics Express
נושאים:
ScAlN
GaN
electron mobility
גישה מקוונת:https://doi.org/10.35848/1882-0786/ae586a
תגים: הוספת תג
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