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The infuence of different interfaces on electrical and optical characteristics of Te doped ALGaAsSB/ALAsSB Bragg Mirrors on InP

The electrical and optical properties of non-doped and Te doped 6.5 periods AlGaAsSb/AlAsSb Bragg mirrors on InP grown by MBE with different types of interfaces between ternary and quaternary layers are reported. The techniques employed were photoluminescence, refectivity and IxV measurements. The d...

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Principais autores: Jean C Harmand, Edson Laureto, José Leonil Duarte, Ivan Frederico Lupiano Dias, Dari de Oliveira Toginho Filho
Formato: Artigo
Idioma:Inglês
Publicado: Universidade Estadual de Londrina 2008-08-01
Series:Semina: Ciências Exatas e Tecnológicas
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Acceso en liña:http://www.uel.br/revistas/uel/index.php/semexatas/article/view/2972
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